A1430 2SA1430

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications 2SA1430 Unit: mm <.

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Datasheet Specifications

Part number: A1430
Manufacturer: Toshiba ↗ Semiconductor
File Size: 133.14 KB
Datasheet: A1430-ToshibaSemiconductor.pdf
Description: 2SA1430

Applications

* Medium Power Amplifier Applications 2SA1430 Unit: mm
* High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE =
* 1 V, IC =
* 0.5 A) : hFE (2) = 60 (min), 120 (typ. ) (VCE =
* 1 V, IC =
* 4 A)
* Low saturation voltage: VCE (sat) =

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