TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications 2SA1431 Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = 2 V, IC = 0.5 A) : hFE(2) = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) Maximum Ratings (Ta = 25°C) Characteristics Symbol Ratin
A1431-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
A1431
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
123.29 KB
Description:
2sa1431.