C5352 Datasheet - Toshiba Semiconductor

C5352 2SC5352

2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm Excellent switching times: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 4 A) High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc =.

C5352_ToshibaSemiconductor.pdf