C5359 - 2SC5359

Toshiba

C5359 Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm * High breakdown voltage: VCEO = 2.

C5359 Applications

* 2SC5359 Unit: mm
* High breakdown voltage: VCEO = 230 V
* Complementary to 2SA1987
* Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Col

📥 Download Datasheet

C5359 Datasheet Preview — Preview of C5359 PDF

Datasheet Details

Part number: C5359
Manufacturer: Toshiba ↗
File Size: 175.69 KB
Datasheet: C5359-Toshiba.pdf
Description: 2SC5359

📁 Related Datasheet

C535 - 2SC535 (Renesas)
C5352 - 2SC5352 (Toshiba Semiconductor)
C5354 - 2SC5354 (Toshiba Semiconductor)
C5355 - 2SC5355 (Toshiba Semiconductor)
C535A-WJN - 5mm Round LED (CREE)
C5300 - VCXO 9X14 J Leaded Surface Mount Package Reflow Process Compatible Optional ACMOS (Vectron International)
C5301 - 2SC5301 (Sanyo Semicon Device)
C5302 - 2SC5302 (Sanyo Semicon Device)

📌 All Tags

2SC5359 Toshiba

Toshiba C5359-like datasheet

C5353 - Silicon NPN Transistor
C5356 - 2SC5356
C5358 - NPN Transistor
C5307 - 2SC5307
C5313 - 2SC5313
C5319 - 2SC5319

C5359 Stock/Price