C5355 Datasheet - Toshiba Semiconductor

C5355 2SC5355

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base cur.

C5355-ToshibaSemiconductor.pdf