D2204 Datasheet - Toshiba Semiconductor

D2204 2SD2204

2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction tem.

D2204-ToshibaSemiconductor.pdf