D2201UK
Seme LAB
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Metal gate rf silicon fet.
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D2201 - PNP/NPN Epitaxial Planar Silicon Transistors
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Ordering number:EN3152
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Features
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Technische Information / technical information
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Key Parameters VRRM IFAVM IFSM VT0 rT RthJC Clamping Force Max. .
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Datenblatt / Data sheet
Netz-Gleichrichterdiode Rectifier Diode
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Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte /.
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D2202UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2202UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GAT.
D2203UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2203UK
MECHANICAL DATA
AD
B
H C
23
G
1
E 54
F
ROHS COMPLIANT METAL GATE RF SILICON FET
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS .
D2204 - 2SD2204
(Toshiba Semiconductor)
2SD2204
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2204
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Un.
D2204UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2204UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
D (2 pls)
C E
B
1
2
3
A
G
5
4
H I
PIN 1 PIN 3 PIN 5
FM
K
DT.
D2205UK - METAL GATE RF SILICON FET
(Seme LAB)
TetraFET
D2205UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
2 1 A
3
F (2 pls)
H J
N (typ)
B
D (2 pls)
MI
PIN 1 PIN 3
SOURCE GATE.