Datasheet4U Logo Datasheet4U.com

GT80J101A Datasheet - Toshiba Semiconductor

GT80J101A Silicon N-Channel IGBT

GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg ¾ Rating 600 ±20 80 160 200 150 -55~150 0.8 Unit V V A W °C °C N m Collect.

GT80J101A-ToshibaSemiconductor.pdf

Preview of GT80J101A PDF
GT80J101A Datasheet Preview Page 2 GT80J101A Datasheet Preview Page 3

Datasheet Details

Part number:

GT80J101A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

136.18 KB

Description:

Silicon n-channel igbt.

GT80J101A Distributor

📁 Related Datasheet

GT80J101 Silicon N-Channel MOSFET (Toshiba Semiconductor)

GT80J101B Silicon N-Channel IGBT (Toshiba Semiconductor)

GT8002 LCD MODULE (Jewel Hill Electronic)

GT800N10 N-Channel Enhancement Mode Power MOSFET (GOFORD)

GT800N10L N-Channel Enhancement Mode Power MOSFET (GOFORD)

GT811 Toxic Gas Sensor Manual (SAFETY SYSTEMS TECHNOLOGY)

GT811 Small MID capacitive screen controller (Goodix)

GT813 5 capacitive touch (Goodix)

TAGS

GT80J101A GT80J101A Silicon N-Channel IGBT Toshiba Semiconductor