GT80J101A Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High.

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Datasheet Specifications

Part number: GT80J101A
Manufacturer: Toshiba ↗ Semiconductor
File Size: 136.18 KB
Datasheet: GT80J101A-ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
* Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg

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GT80J101A Silicon N-Channel IGBT Toshiba Semiconductor

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