GT80J101A Datasheet, Igbt, Toshiba Semiconductor

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GT80J101A

Toshiba ↗ Semiconductor

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Silicon n-channel igbt.

Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0

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GT80J101A Silicon N-Channel IGBT Toshiba Semiconductor