GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg ¾ Rating 600 ±20 80 160 200 150 -55~150 0.8 Unit V V A W °C °C N m Collect
GT80J101A-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT80J101A
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
136.18 KB
Description:
Silicon n-channel igbt.