Datasheet Specifications
- Part number
- GT80J101B
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 65.40 KB
- Datasheet
- GT80J101B-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel IGBT
Description
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications * * * .
Applications
* Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @Tc = 100°CGT80J101B Distributors
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