GT80J101B Datasheet - Toshiba Semiconductor

GT80J101B Silicon N-Channel IGBT

GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @Tc = 100°C @Tc = 25°C Symbol VCES VGES IC ICP Rating 600 ± 20 33 80 160 80 PC 200 3.5 Tj Ts.

GT80J101B-ToshibaSemiconductor.pdf