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GT8G132 Silicon N-Channel IGBT

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Description

www.DataSheet4U.com GT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash Applications Unit: mm *

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Applications

* Unit: mm
* Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum

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GT8G132 Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT8G132-like datasheet
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