GT8G151 Silicon N-Channel IGBT

Toshiba

Description

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 GT8G151 Strobe Flash Applications * Enhancement-mode * Low.

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Datasheet Specifications

Part number: GT8G151
Manufacturer: Toshiba ↗
File Size: 269.51 KB
Datasheet: GT8G151-Toshiba.pdf
Description: Silicon N-Channel IGBT

Applications

* Enhancement-mode
* Low gate drive voltage: VGE = 2.5 V (min. ) (@IC = 150 A)
* Peak collector current: IC = 150 A (max)
* Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES

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GT8G151 Silicon N-Channel IGBT Toshiba

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