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GT8G151 Datasheet - Toshiba

GT8G151 Silicon N-Channel IGBT

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 GT8G151 Strobe Flash Applications Enhancement-mode Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V DC VGES ±4 Gate-emitter voltage V Pulse VGES ±5 Collector current Pulse (N.

GT8G151 Datasheet (269.51 KB)

Preview of GT8G151 PDF

Datasheet Details

Part number:

GT8G151

Manufacturer:

Toshiba ↗

File Size:

269.51 KB

Description:

Silicon n-channel igbt.

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GT8G151 Silicon N-Channel IGBT Toshiba

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