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GT8G134 Datasheet - Toshiba Semiconductor

GT8G134-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT8G134

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

201.45 KB

Description:

Silicon n-channel igbt.

GT8G134, Silicon N-Channel IGBT

GT8G134 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G134 Strobe Flash Applications Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=2.5V(min))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 ±4 ±5 150 1.1 0.6 150 55~150

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