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GT8G131 Datasheet - Toshiba Semiconductor

GT8G131 Silicon N-Channel MOSFET

GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm Supplied in Compact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms Symbol VCES.

GT8G131 Datasheet (211.99 KB)

Preview of GT8G131 PDF

Datasheet Details

Part number:

GT8G131

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

211.99 KB

Description:

Silicon n-channel mosfet.

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GT8G131 Silicon N-Channel MOSFET Toshiba Semiconductor

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