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GT8G131 Silicon N-Channel MOSFET

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Description

GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm * * * * * S.

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Applications

* Unit: mm
* Supplied in Compact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C)

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GT8G131 Silicon N-Channel MOSFET Toshiba Semiconductor
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