Datasheet Specifications
- Part number
- GT8G136
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 201.18 KB
- Datasheet
- GT8G136-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel IGBT
Description
GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications * * * Compact and .
Applications
* Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70℃(max))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (Note 2a) (NoGT8G136 Distributors
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