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GT8G136 Datasheet - Toshiba Semiconductor

GT8G136 Silicon N-Channel IGBT

GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70℃(max))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Symbol VCES VGES VGES ICP PC (1) PC (2) Tj Tstg Rating 400 ±6 ±8 150 1.1 0.6 150 .

GT8G136 Datasheet (201.18 KB)

Preview of GT8G136 PDF

Datasheet Details

Part number:

GT8G136

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

201.18 KB

Description:

Silicon n-channel igbt.

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GT8G136 Silicon N-Channel IGBT Toshiba Semiconductor

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