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GT8G133 Datasheet - Toshiba Semiconductor

GT8G133 Silicon N-Channel IGBT

GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Compact and Thin (TSSOP-8) package Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation（t＝10 s） Junction temperature Storage temperatur.

GT8G133 Datasheet (195.29 KB)

Preview of GT8G133 PDF

Datasheet Details

Part number:

GT8G133

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

195.29 KB

Description:

Silicon n-channel igbt.

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GT8G133 Silicon N-Channel IGBT Toshiba Semiconductor

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