Datasheet Specifications
- Part number
- GT8G133
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 195.29 KB
- Datasheet
- GT8G133-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel IGBT
Description
GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications * * * * Co.
Applications
* Compact and Thin (TSSOP-8) package Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage CGT8G133 Distributors
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