JDV2S26FS, Toshiba Semiconductor
JDV2S26FS
TOSHIBA Diode Silicon Epitaxial Planar Type
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JDV2S26FS
VCO for UHF Band Radio
• • • High capacitance ratio: C1V/C4V =2.9.
JDV2S29FS, Toshiba Semiconductor
JDV2S29FS
TOSHIBA Diode Silicon Epitaxial Planar Type
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JDV2S29FS
VCO for UHF Band Radio
• • • High capacitance ratio : C1V/C4V =2..
JDV2S01E, Toshiba Semiconductor
JDV2S01E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Lo.
JDV2S01S, Toshiba Semiconductor
JDV2S01S
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01S
VCO for UHF band
Unit in mm • • • High capacitance ratio: C1V/C4V = 2.0 (typ.) Low seri.
JDV2S02E, Toshiba Semiconductor
JDV2S02E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S02E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Lo.
JDV2S05E, Toshiba Semiconductor
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JDV2S05E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05E
VCO for UHF band
• • • Small Package High Capacitance Ratio : C1V/.
