JDV2S19S Datasheet - Toshiba

JDV2S19S VCO

JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band High capacitance ratio: C1V/C4V = 1.8 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 55~150 Unit V °C °C Note: Using continuously under heavy loads (e.g. the appl.

JDV2S19S_Toshiba.pdf