JDV2S10FS Datasheet - Toshiba Semiconductor

JDV2S10FS VCO

JDV2S10FS TOSHIBA Diode Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S10FS VCO for the UHF band High capacitance ratio: C0.5V/C2.5V =2.55 (typ.) Low series resistance: rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. ｶｿｰﾄﾞﾏｰｸ Unit: mm 0.6±0.05 0.1 0.8±0.05 A Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 55~150 Unit V °C.

JDV2S10FS_ToshibaSemiconductor.pdf