JDV2S17S Datasheet (Toshiba)

JDV2S17S, VCO

JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio High Capacitance Ratio : C1V/C4V = 2.1 (typ.) Low Series Resistance : rs = 0.6 Ω (typ.) This device is suitable for use in a small-size tuner.

Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 55~150 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1K1A Weight: 0.0011 g (typ.) Elec