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JDV2S17S VCO

JDV2S17S Description

JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio * * * High Capacitance Ratio : C1V/C4V =.

JDV2S17S Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
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Toshiba JDV2S17S-like datasheet