JDV2S14E Datasheet - Toshiba Semiconductor

JDV2S14E Diode

JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S14E Useful for VCO/TCXO Small Package High Capacitance Ratio : C1V/C2.5V = 2.15 (typ.) Low Series Resistance : rs = 0.4 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 55~125 Unit V °C °C Weight: 0.0014 g 000707EAA1 TOSHIBA is continually working to improve the qualit.

JDV2S14E_ToshibaSemiconductor.pdf