JDV2S10S Datasheet - Toshiba Semiconductor

JDV2S10S VCO Diode

JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S10S VCO for UHF Band Radio High Capacitance Ratio : C0.5V/C2.5V = 2.5 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 55~150 Unit V °C °C Electrical Characteristics (Ta = 25°C) Charact.

JDV2S10S Datasheet (89.18 KB)

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Datasheet Details

Part number:

JDV2S10S

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

89.18 KB

Description:

Vco diode.

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JDV2S10S VCO Diode Toshiba Semiconductor

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