JDV2S10S Datasheet - Toshiba Semiconductor

JDV2S10S VCO Diode

JDV2S10S TOSHIBA DIODE Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S10S VCO for UHF Band Radio High Capacitance Ratio : C0.5V/C2.5V = 2.5 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 55~150 Unit V °C °C Electrical Characteristics (Ta = 25°C) Charact.

JDV2S10S_ToshibaSemiconductor.pdf