JDV2S10T Datasheet (Toshiba Semiconductor)

JDV2S10T, VCO for UHF Band Radio

JDV2S10T TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10T VCO for UHF Band Radio High capacitance ratio: C0.5 V/C2.5 V = 2.5 (typ.) Low series resistance: rs = 0.35 Ω (typ.) Useful for small size tuner.

Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1H1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage