Datasheet4U Logo Datasheet4U.com

JDV2S10T Datasheet - Toshiba Semiconductor

JDV2S10T VCO for UHF Band Radio

JDV2S10T TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10T VCO for UHF Band Radio High capacitance ratio: C0.5 V/C2.5 V = 2.5 (typ.) Low series resistance: rs = 0.35 Ω (typ.) Useful for small size tuner. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1H1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage.

JDV2S10T_ToshibaSemiconductor.pdf

Preview of JDV2S10T PDF
JDV2S10T Datasheet Preview Page 2 JDV2S10T Datasheet Preview Page 3

Datasheet Details

Part number:

JDV2S10T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

91.80 KB

Description:

Vco for uhf band radio.

📁 Related Datasheet

JDV2S10FS VCO (Toshiba Semiconductor)

JDV2S10S VCO Diode (Toshiba Semiconductor)

JDV2S13FS VCO Diode (Toshiba Semiconductor)

JDV2S14E Diode (Toshiba Semiconductor)

JDV2S16FS VCO (Toshiba Semiconductor)

JDV2S17S VCO (Toshiba)

JDV2S19S VCO (Toshiba)

JDV2S01E VCO for UHF band (Toshiba Semiconductor)

TAGS

JDV2S10T JDV2S10T VCO for UHF Band Radio Toshiba Semiconductor

JDV2S10T Distributor