JDV2S01S Datasheet (Toshiba Semiconductor) - TOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S01S, TOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit in mm High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner.

Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 55~150 Unit V °C °C JEDEC EIAJ   1-1K1A Electrical Characteristics (Ta = 25°C) Chara