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JDV2S01S Datasheet - Toshiba Semiconductor

JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type

JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S01S VCO for UHF band Unit in mm High capacitance ratio: C1V/C4V = 2.0 (typ.) Low series resistance: rs = 0.5 Ω (typ.) This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 55~150 Unit V °C °C JEDEC EIAJ   1-1K1A Electrical Characteristics (Ta = 25°C) Chara.

JDV2S01S_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

JDV2S01S

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

76.34 KB

Description:

Toshiba diode silicon epitaxial planar type.

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JDV2S01S JDV2S01S TOSHIBA Diode Silicon Epitaxial Planar Type Toshiba Semiconductor

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