JDV2S02E Datasheet (Toshiba Semiconductor)

JDV2S02E, VCO for UHF band

JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.60 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitan