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JDV2S02E Datasheet - Toshiba Semiconductor

JDV2S02E VCO for UHF band

JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Low Series Resistance: rs = 0.60 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitan.

JDV2S02E Datasheet (88.10 KB)

Preview of JDV2S02E PDF

Datasheet Details

Part number:

JDV2S02E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

88.10 KB

Description:

Vco for uhf band.

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JDV2S02E VCO for UHF band Toshiba Semiconductor

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