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JDV2S05E Datasheet - Toshiba Semiconductor

JDV2S05E VCO

www.DataSheet4U.com JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band Small Package High Capacitance Ratio : C1V/C4V = 1.9 (typ.) Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 55~125 Unit V °C °C Weight: 0.0014 g 000707EAA1 TOSHIBA is continually working to improve the quality an.

JDV2S05E Datasheet (80.47 KB)

Preview of JDV2S05E PDF

Datasheet Details

Part number:

JDV2S05E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

80.47 KB

Description:

Vco.

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