JDV2S08S Datasheet (Toshiba Semiconductor)

JDV2S08S, VCO for UHF Band Radio

JDV2S08S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S08S VCO for UHF Band Radio High Capacitance Ratio : C1V/C4V = 3.0 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.

Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 -55~150 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Character