JDV2S01E, Toshiba Semiconductor
JDV2S01E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Lo.
JDV2S01S, Toshiba Semiconductor
JDV2S01S
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01S
VCO for UHF band
Unit in mm • • • High capacitance ratio: C1V/C4V = 2.0 (typ.) Low seri.
JDV2S02E, Toshiba Semiconductor
JDV2S02E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S02E
VCO for UHF band
Unit: mm Small Package High Capacitance Ratio: C1V/C4V = 2.0 (typ.) Lo.
JDV2S05E, Toshiba Semiconductor
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JDV2S05E
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05E
VCO for UHF band
• • • Small Package High Capacitance Ratio : C1V/.
JDV2S07S, Toshiba Semiconductor
JDV2S07S
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S07S
VCO for UHF Band Radio
· · · High Capacitance Ratio : C1V/C4V = 2.3 (typ.) Low Series R.
JDV2S10FS, Toshiba Semiconductor
JDV2S10FS
TOSHIBA Diode Silicon Epitaxial Planar Type
..
JDV2S10FS
VCO for the UHF band
• • • High capacitance ratio: C0.5V/C2.5V =2.
JDV2S10S, Toshiba Semiconductor
JDV2S10S
TOSHIBA DIODE Silicon Epitaxial Planar Type
..
JDV2S10S
VCO for UHF Band Radio
• • • High Capacitance Ratio : C0.5V/C2.5V =.
JDV2S10T, Toshiba Semiconductor
JDV2S10T
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S10T
VCO for UHF Band Radio
· · · High capacitance ratio: C0.5 V/C2.5 V = 2.5 (typ.) Low ser.
