JDV2S26FS Datasheet - Toshiba Semiconductor

JDV2S26FS VCO Diode

JDV2S26FS TOSHIBA Diode Silicon Epitaxial Planar Type www.DataSheet4U.com JDV2S26FS VCO for UHF Band Radio High capacitance ratio: C1V/C4V =2.9 (typ.) Low series resistance: rs = 0.4 Ω (typ.) This device is suitable for use in small tuners. ｶｿｰﾄﾞﾏｰｸ Unit: mm 0.6±0.05 0.1 0.8±0.05 A Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 55~150 Unit V °C °C 0.07 M.

JDV2S26FS_ToshibaSemiconductor.pdf