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K2719 Datasheet - Toshiba Semiconductor

K2719, N-Channel MOS Type Field Effect Transistor

failure of which may cause loss of human life, bodily injury, s...

K2719-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K2719

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

268.75 KB

Description:

N-channel mos type field effect transistor.

K2719 Description

2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source volt

Features

* failure of which may cause loss of human life, bodily injury, s

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