K3562 Datasheet - Toshiba Semiconductor

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K3562 2SK3562

2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications * Low drain-source ON-r.

K3562_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K3562

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

201.30 KB

Description:

2SK3562

Applications

* Low drain-source ON-resistance: RDS (ON) = 0.9 Ω (typ. )
* High forward transfer admittance: |Yfs| = 5.0 S (typ. )
* Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

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