K3563 Datasheet - Toshiba Semiconductor

K3563 2SK3563

www.DataSheet4U.com TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55~150 A W mJ A mJ °C °C Unit 0.69±0.15 2.8Max V V V 2.54±0.25 0.64±0.15 2.54±0.25 2.6 Pul.

K3563 Datasheet (350.82 KB)