Datasheet Details
Part number:
K3565
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
220.04 KB
Description:
2sk3565.
K3565_ToshibaSemiconductor.pdf
K3565_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
K3565
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
220.04 KB
Description:
2sk3565.
2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3565 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate
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