K3561 Datasheet - Toshiba Semiconductor

K3561, 2SK3561

2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications * Low drain-source ON r.

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K3561_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K3561

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

227.47 KB

Description:

2SK3561

Applications

* Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ. )
* High forward transfer admittance: |Yfs| = 6.5 S (typ. )
* Low leakage current: IDSS = 100 μA (VDS = 500 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (T

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