SSM4K27CT Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching Applications * Small package * L.

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Datasheet Specifications

Part number: SSM4K27CT
Manufacturer: Toshiba ↗ Semiconductor
File Size: 259.71 KB
Datasheet: SSM4K27CT_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* Small package
* Low on-resistance: RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Sou

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SSM4K27CT Silicon N-Channel MOSFET Toshiba Semiconductor

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