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SSM4K27CT Datasheet - Toshiba Semiconductor

SSM4K27CT Silicon N-Channel MOSFET

SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching Applications Small package Low on-resistance: RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±12 V Drain current DC ID Pulse IDP 0.5 A 1.0 Power dissipa.

SSM4K27CT Datasheet (259.71 KB)

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Datasheet Details

Part number:

SSM4K27CT

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

259.71 KB

Description:

Silicon n-channel mosfet.

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SSM4K27CT Silicon N-Channel MOSFET Toshiba Semiconductor

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