Datasheet Details
Part number:
SSM3J02T
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
147.88 KB
Description:
Toshiba field effect transistor silicon p channel mos type.
SSM3J02T_ToshibaSemiconductor.pdf
SSM3J02T_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
SSM3J02T
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
147.88 KB
Description:
Toshiba field effect transistor silicon p channel mos type.
SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch High Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 Ω (max) (@VGS = 4 V) : Ron = 0.7 Ω (max) (@VGS = 2.5 V) Low-voltage operation possible Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID ID
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