SSM3J02T Datasheet - Toshiba Semiconductor

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch High Speed Switching Applications Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 Ω (max) (@VGS = 4 V) : Ron = 0.7 Ω (max) (@VGS = 2.5 V) Low-voltage operation possible Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID ID.

SSM3J02T Datasheet (147.88 KB)

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Datasheet Details

Part number:

SSM3J02T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

147.88 KB

Description:

Toshiba field effect transistor silicon p channel mos type.

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SSM3J02T TOSHIBA Field Effect Transistor Silicon Channel MOS Type Toshiba Semiconductor

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