SSM3J02F Datasheet - Toshiba Semiconductor

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch High Speed Switching Applications Small package Low on resistance : Ron = 0.5 Ω (max) (@VGS = 4 V) : Ron = 0.7 Ω (max) (@VGS = 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range S.

SSM3J02F Datasheet (164.87 KB)

SSM3J02F Datasheet Preview — Preview of SSM3J02F PDF

Datasheet Details

Part number:

SSM3J02F

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

164.87 KB

Description:

Toshiba field effect transistor silicon p channel mos type.

📁 Related Datasheet

SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Toshiba Semiconductor)

SSM3J01F Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Toshiba Semiconductor)

SSM3J05FU Power Management Switch High Speed Switching Applications (Toshiba Semiconductor)

SSM3J09FU Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J108TU Field Effect Transistor Silicon P-Channel MOS Type (Toshiba Semiconductor)

SSM3J109TU Silicon P-Channel MOSFET (Toshiba Semiconductor)

SSM3J110TU Field-Effect Transistor Silicon P-Channel MOS Type (Toshiba Semiconductor)

TAGS

SSM3J02F TOSHIBA Field Effect Transistor Silicon Channel MOS Type Toshiba Semiconductor

SSM3J02F Distributor