SSM3J01F Datasheet - Toshiba Semiconductor

SSM3J01F Silicon P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F SSM3J01F High Speed Switching Applications Unit: mm Small package Low on resistance : Ron = 0.4 Ω (max) (VGS = 4 V) : Ron = 0.6 Ω (max) (VGS = 2.5 V) Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) VDS VGSS ID IDP PD .

SSM3J01F Datasheet (335.82 KB)

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Datasheet Details

Part number:

SSM3J01F

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

335.82 KB

Description:

Silicon p-channel mosfet.

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SSM3J01F Silicon P-Channel MOSFET Toshiba Semiconductor

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