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SSM3J02T
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J02T
Power Management Switch High Speed Switching Applications
· · · · Component package suitable for high-density mounting Small Package Low ON Resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) Low-voltage operation possible Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note2) PD (Note1) Tch Tstg Rating -30 ±10 -1.5 -3.0 1250 150 -55 to 150 A Unit V V
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-3S1A
Note1:
Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm2, t = 10 s)
Weight: 10 mg (typ.
SSM3J02T Datasheet
