SSM3J01F Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Unit: mm - Small package - Low on resistance : Ron = 0.4 Ω (max) (VGS = - 4 V) : Ron = 0.6 Ω (max) (VGS = - 2.5 V) - Low gate threshold voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation (Ta = 25°C) VDS VGSS ID IDP PD - 30 ±10 - 700 m A - 1400 200 m W Channel temperature Storage temperature range Tch °C Tstg - 55~150 °C JEDEC TO-236MOD Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-59 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions...