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SSM3J02F - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

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SSM3J02F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02F Power Management Switch High Speed Switching Applications · · · Small package Low on resistance : Ron = 0.5 Ω (max) (@VGS = −4 V) : Ron = 0.7 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID IDP PD Tch Tstg Rating -30 ±10 -600 -1200 200 150 -55~150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1F Weight: 0.012 g (typ.
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