SSM3J02F Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications - - - Small package Low on resistance : Ron = 0.5 Ω (max) (@VGS = - 4 V) : Ron = 0.7 Ω (max) (@VGS = - 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID IDP PD Tch Tstg Rating -30 ±10 -600 -1200 200 150 -55~150 Unit V V m A m W °C °C JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1F Weight: 0.012 g (typ.) Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that e into direct contact with devices should be made of anti-static materials. 2003-03-27 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±10 V, VDS = 0 ID = -1 m A, VGS = 0 VDS = -30 V, VGS = 0 VDS = -3 V, ID = -0.1 m A VDS = -3 V, ID = -0.3 A ID = -0.3 A, VGS = -4 V ID = -0.3 A, VGS = -2.5 V VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDD = -15 V, ID = -0.3 A, VGS = 0~-2.5 V, RG = 4.7 W (Note) (Note) (Note) Min ¾ -30 ¾ -0.6 0.6 ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 0.4 0.55 150 21 61 55 52 Max ±1 ¾ -1 -1.1 ¾ 0.5 0.7 ¾ ¾ ¾ ¾ ¾ Unit m A V m A V S W p F p F p F ns Note: Pulse test Switching Time Test Circuit Precaution Vth can be expressed as voltage...