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SSM3J01T - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

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SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications · · · Small Package Low on Resistance : Ron = 0.4 Ω (max) (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note2) PD (Note1) Tch Tstg Rating -30 ±10 -1.7 -3.4 1250 150 -55~150 2 A Unit V V Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range mW °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1A Note 1: Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature. Weight: 10 mg (typ.
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