SSM3J05FU Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications - - - Small package Low on resistance : Ron = 3.3 Ω (max) (@VGS = - 4 V) : Ron = 4.0 Ω (max) (@VGS = - 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±12 -200 -400 150 150 -55~150 Unit V V m A Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range m W °C °C JEDEC JEITA TOSHIBA ― SC-70 2-2E1E Note 1: Mounted on FR4 board. 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.6 mm ´ 3) Weight: 0.006 g (typ.) Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that e into direct contact with devices should be made of anti-static materials. 2003-03-27 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±12 V, VDS = 0 ID = -1 m A, VGS = 0 VDS = -20 V, VGS = 0 VDS = -3 V, ID = -0.1 m A VDS = -3 V, ID = -50 m A ID = -100 m A, VGS = -4 V ID = -50 m A, VGS = -2.5 V (Note 2) (Note 2) (Note 2) Min ¾ -20 ¾ -0.6 100 ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 2.1 3.2 27 7 21 70 70 Max ±1 ¾ -1 -1.1 ¾ 3.3 4.0 ¾ ¾ ¾ ¾ ¾ Unit m A V m A V m S W p F p F p F ns VDS = -3 V, VGS = 0, f = 1 MHz VDS = -3 V, VGS = 0, f = 1 MHz VDS = -3 V, VGS = 0, f = 1 MHz VDD = -3 V, ID = -50 m A, VGS = 0~-2.5 V Note 2: Pulse...