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SSM3J01T Datasheet - Toshiba Semiconductor

SSM3J01T_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3J01T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

169.82 KB

Description:

Toshiba field effect transistor silicon p channel mos type.

SSM3J01T, TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications Small Package Low on Resistance : Ron = 0.4 Ω (max) (@VGS = 4 V) : Ron = 0.6 Ω (max) (@VGS = 2.5 V) Low Gate Threshold Voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Pulse Symbol VDS VGSS ID IDP (Note2) PD (Note1) Tch Tstg Rating -30 ±10 -1.7 -3.4 1250 150

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