SSM6L05FU Datasheet - Toshiba Semiconductor

SSM6L05FU MOSFET

SSM6L05FU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L05FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on resistance Q1: Ron = 0.8 Ω (max) (@VGS = 4 V) Q2: Ron = 3.3 Ω (max) (@VGS = 4 V) Low gate threshold voltage Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ±12 400.

SSM6L05FU Features

* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing

SSM6L05FU_ToshibaSemiconductor.pdf