SSM6L10TU Datasheet - Toshiba Semiconductor

SSM6L10TU MOSFET

SSM6L10TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395mΩ (max) (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 0.65 0.65 Unit V V A Q1 Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 1.3±0.1 Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGS.

SSM6L10TU_ToshibaSemiconductor.pdf