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SSM6L10TU MOSFET

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SSM6L10TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications *

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Applications

* Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395mΩ (max) (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 0.65 0.65 Unit V V A Q1 Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 1.3±0.1 Characteristics Drain-Source vol

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