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SSM6L16FE Datasheet - Toshiba Semiconductor

SSM6L16FE Silicon Dual-Channel MOSFET

SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(π-MOSVI) SSM6L16FE High Speed Switching Applications Analog Switch Applications Small package Low on-resistance Q1: RDS(ON) = 4 Ω (max) (@VGS = 2.5 V) Q2: RDS(ON) = 12 Ω (max) (@VGS = 2.5 V) Unit: mm Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit 20 V ±10 V 100 mA 200 Q2.

SSM6L16FE_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6L16FE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

242.61 KB

Description:

Silicon dual-channel mosfet.

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SSM6L16FE SSM6L16FE Silicon Dual-Channel MOSFET Toshiba Semiconductor