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SSM6L12TU Silicon Dual-Channel MOSFET

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Description

SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications * Optimum for high-densit.

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Applications

* Optimum for high-density mounting in small packages
* Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Characteristics Symbol Rating Unit Drain

SSM6L12TU Distributors

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SSM6L12TU Silicon Dual-Channel MOSFET Toshiba Semiconductor
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