SSM6L12TU Datasheet - Toshiba Semiconductor

SSM6L12TU Silicon Dual-Channel MOSFET

SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ± 12 V Drain current DC .

SSM6L12TU-ToshibaSemiconductor.pdf