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SSM6L09FU Datasheet - Toshiba Semiconductor

SSM6L09FU Silicon N/P-Channel MOSFET

SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI) SSM6L09FU Power Management Switch High Speed Switching Applications Unit: mm Small package Low on-resistance Q1: RDS(ON) = 0.7 Ω (max) (@VGS = 10 V) Q2: RDS(ON) = 2.7 Ω (max) (@VGS = 10 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating Unit 30 V ±20 V 400 mA 800 Q2 Ab.

SSM6L09FU_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM6L09FU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

268.71 KB

Description:

Silicon n/p-channel mosfet.

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SSM6L09FU SSM6L09FU Silicon P-Channel MOSFET Toshiba Semiconductor