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SSM6P09FU P-Channel MOSFET

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Description

SSM6P09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P09FU High Speed Switching Applications Unit: mm * Small package <.

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Applications

* Unit: mm
* Small package
* Low Drain-Source ON resistance. : Ron = 2.7 Ω (max) (@VGS =
* 10 V) : Ron = 4.2 Ω (max) (@VGS =
* 4 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS
* 30 V G

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