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SSM6P09FU Datasheet - Toshiba Semiconductor

SSM6P09FU P-Channel MOSFET

SSM6P09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P09FU High Speed Switching Applications Unit: mm Small package Low Drain-Source ON resistance. : Ron = 2.7 Ω (max) (@VGS = 10 V) : Ron = 4.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID 200 mA IDP .

SSM6P09FU Datasheet (161.67 KB)

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Datasheet Details

Part number:

SSM6P09FU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

161.67 KB

Description:

P-channel mosfet.

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SSM6P09FU P-Channel MOSFET Toshiba Semiconductor

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