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SSM6P816R Datasheet - Toshiba

SSM6P816R P-Channel MOSFET

SSM6P816R Features

* (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V) 3. Packaging and Internal Circuit TSOP6F SSM6P816R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2020 To

SSM6P816R Datasheet (346.01 KB)

Preview of SSM6P816R PDF

Datasheet Details

Part number:

SSM6P816R

Manufacturer:

Toshiba ↗

File Size:

346.01 KB

Description:

P-channel mosfet.

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SSM6P816R P-Channel MOSFET Toshiba

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