Datasheet Specifications
- Part number
- SSM6P816R
- Manufacturer
- Toshiba ↗
- File Size
- 346.01 KB
- Datasheet
- SSM6P816R-Toshiba.pdf
- Description
- P-Channel MOSFET
Description
MOSFETs Silicon P-Channel MOS SSM6P816R 1.Applications * Power Management Switches 2..Features
* (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ. ) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ. ) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ. ) (VGS = -4.5 V) 3. Packaging and Internal Circuit TSOP6F SSM6P816R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2020 ToSSM6P816R Distributors
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