SSM6H19NU DC-DC Converters

Toshiba

Description

Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier SSM6H19NU 1.Applications * DC-DC Converters 2..

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Datasheet Specifications

Part number: SSM6H19NU
Manufacturer: Toshiba ↗
File Size: 297.51 KB
Datasheet: SSM6H19NU-Toshiba.pdf
Description: DC-DC Converters

Features

* (1) N-channel MOSFET and a schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 160 mΩ (typ. ) (@VGS = 3.6 V) (2) 1.8-V gate drive voltage. 2.2. Diode Features (1) Low forward voltage: VF = 0.51 V (typ. ) (@IF = 500 mA) 3. Packaging and Internal Ci

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SSM6H19NU DC-DC Converters Toshiba

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